Power Device Matrix

PIN, Schottky, MOSFET | 10V, 100V, 1200V | steady + switching

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Class

Material

Drift Region Calculator

Material Target BV (V)

N_d,max = — W_d,min = — E_c = —

NPT: N_d = ε_sE_c² / 2qBV | W_d = 2BV / E_c — Baliga, Fundamentals of Power Semiconductor Devices, 2nd ed.

Comparison

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Reverse Breakdown

Device Cross-Section

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steady.in + switching.in

Material	Class	Steady	Switch

Al Activation — 4H-SiC

Energy (keV) Dose (cm⁻²) Anneal T (°C) Time (min)

R_p = — ΔR_p = — C_peak = — C_ss = — C_act = — R_act = —

C_act = C_tot/(1 + C_tot/C_ss) · (1 − e^−κt) | Analytical solution of Simonka Eq. 3.31, evaluated at depth R_p where C_tot = C_peak

Activation vs Temperature

Activation vs Anneal Time

Derivation — from Simonka Eq. 3.31 to the formula above

1. Simonka's ODE (Eq. 3.31, §3.4.1):
dCact/dt = −κ · (Cact − Ctot / (1 + Ctot/Css))
2. Let C∞ = Ctot / (1 + Ctot/Css)  — the steady-state target. The ODE becomes:
dCact/dt = −κ · (Cact − C∞)  →  standard 1st-order linear ODE
3. With initial condition Cact(0) = 0, the analytical solution is:
Cact(t) = C∞ · (1 − e−κt) = Ctot / (1 + Ctot/Css) · (1 − e−κt)
4. Css(T) and κ(T) are Arrhenius: Z·exp(−Ea/kBT). Parameters from Table 3.5.

C_ss = solid solubility — the max dopant concentration the lattice can electrically activate at temperature T.

C_tot vs C_peak — The model uses C_tot(x), the local concentration at depth x. Our calculator evaluates at x = R_p where C_tot = C_peak (the worst-case point). At shallower/deeper depths where C_tot < C_peak, activation ratio is higher.

Red dot = your current settings. Left chart sweeps T. Right chart sweeps t.